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In this paper we propose an improved nano scaled Surrounding gate MOSFET utilizing Silvaco TCAD software. When the channel length of the bulk planer MOSFET is scaling down, a planer MOSFET experiences short channel effects and reduce the device performance. The different parameter like drain characteristics are extracted for Surrounding gate MOSFET. The analytical results are verified with the help of 3D TCAD Silvaco device Simulator. The results represent the greater performance is acquired for surrounding gate MOSFET. Surrounding Gate MOSFET current drivability is high as compared with bulk planer MOSFET. Surrounding gate MOSFET attains great possibility to become a future device as bulk planer MOSFETs for creation of upcoming generation with low power, high speed devices.