Improved Performance Analysis of Ingaasp Mesfet for Higher Power Applications

Abstract

Advanced developments that were created recently within the field of semiconducting material (Si) semiconductor technology have allowed it to approach the theoretical limits of the Si material. but there area unit latest power device needs for several applications that can't be handled by this Si-based power devices. These needs embrace like higher interference voltages, shift frequencies, efficiency, and reliableness. And hence, the newest semiconductor materials for highest power device applications area unit required to beat these limitations. For high power needs, wide bandgap semiconductors like carbide (SiC) and Ga compound (GaN) and Ga chemical compound (GaAs), that area unit having superior electrical properties, area unit possible to exchange Si within the close to future. This Study thesis compares the electrical characteristics of wide-bandgap semiconductors with relation to semiconducting material (Si) to verify their superior utility for power applications and predicts the long run of power device semiconductor materials. This thesis conjointly includes the study that is performed related to the electrical characteristics of high frequency semiconductor devices in terms of I-V characteristics analysing it  with relation to drain current fluctuation within the semiconductor devices. The semiconductor devices that area unit used for this specific thesis area unit – Metal impact Semiconductor Field impact Transistors (MESFETs). For this material we will add an new material which will create a new application,that will be useful for higher power applications.