Effect of Etching Time on the Topography of Porous Silicon Surfaces Produced by Electro Chemical Method

Abstract

This study includes the effect of etching time(5-10-15)minon morphology of porous silicon surfaces which density applied (30) mA and constant concentration (1:9) methanol : HF.

The production of Nano crystalline silicon structures and control of their production conditions is the first step to control the properties of the devices (detectors, diodes, solar cells, sensors) and their appropriate applications. Ultimately, this is important in promoting research and development of renewable energy , We observe this study that the roughness , average diameter and root mean square are increasing with increasing the etching time of silicon wafers,  and these results are agreement with [1] , [2]  .