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In this study, the FORS-HET software was used for numerical analysis of a solar cell based on Cu (In, Ga) (Se, S) 2 (CIGSSe)absorber layer, with a buffer layer ZnO:B (BZO)and Zn0.8Mg0.2O (ZMO) widow layer without CdS. The effect of changing the thickness with changing the doping concentration was taken for both the (CIGSSe) absorption and the buffer layer (BZO), to study the electrical cell properties. The solar energy conversion efficiency is 29.29%, the filling factor is 85.59%, the open circuit voltage is 783.1 mV, the short circuit current is 43.7 mA. Then take the effect of changing layers of buffer on the performance of this cell, and find the (BZO) buffer layer best of In2S3, CdS, ZnS, ZnSe respectively.